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CER6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON...
www.DataSheet4U.com
CER6080
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D1 8 D1 7 D2 6 D2 5
5
DIP-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 60 P-Channel -60 Units V V A A W C
±20
5.6 20 2.5 -55 to 150
±20
-3.3 -15
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Details are subject to change without notice . 1
Rev 1. 2006.Sep http://www.cetsemi.com
CER6080
N-Channel Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Sou...