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Effect Transistor. CER6080 Datasheet

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Effect Transistor. CER6080 Datasheet






CER6080 Transistor. Datasheet pdf. Equivalent




CER6080 Transistor. Datasheet pdf. Equivalent





Part

CER6080

Description

Dual Enhancement Mode Field Effect Transistor



Feature


www.DataSheet4U.com CER6080 Dual Enhanc ement Mode Field Effect Transistor (N a nd P Channel) FEATURES 60V, 5.6A, RDS( ON) = 45mΩ @VGS = 10V. RDS(ON) = 75m @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell des ign for extremely low RDS(ON). High pow er and current handing capability. Lead free product is acquired..
Manufacture

CET

Datasheet
Download CER6080 Datasheet


CET CER6080

CER6080; D1 8 D1 7 D2 6 D2 5 5 DIP-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATI NGS Parameter Drain-Source Voltage Gate -Source Voltage Drain Current-Continuou s Drain Current-Pulsed a TA = 25 C unl ess otherwise noted Symbol VDS VGS ID I DM PD TJ,Tstg N-Channel 60 P-Channel -6 0 Units V V A A W C ±20 5.6 20 2.5 -5 5 to 150 ±20 -3.3 -15 Maximum Power Dissipation Operatin.


CET CER6080

g and Store Temperature Range Thermal C haracteristics Parameter Thermal Resist ance, Junction-to-Ambient b Symbol RθJ A Limit 50 Units C/W Details are subje ct to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.com CER60 80 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-So urce Breakdown Voltage Zero Gate Voltag e Drain Current Gat.


CET CER6080

e Body Leakage Current, Forward Gate Bod y Leakage Current, Reverse On Character istics Gate Threshold Voltage Static Dr ain-Source On-Resistance Dynamic Charac teristics c Forward Transconductance In put Capacitance Output Capacitance Reve rse Transfer Capacitance Switching Char acteristics c Turn-On Delay Time Turn-O n Rise Time Turn-Off Delay Time Turn-Of f Fall Time Total .

Part

CER6080

Description

Dual Enhancement Mode Field Effect Transistor



Feature


www.DataSheet4U.com CER6080 Dual Enhanc ement Mode Field Effect Transistor (N a nd P Channel) FEATURES 60V, 5.6A, RDS( ON) = 45mΩ @VGS = 10V. RDS(ON) = 75m @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell des ign for extremely low RDS(ON). High pow er and current handing capability. Lead free product is acquired..
Manufacture

CET

Datasheet
Download CER6080 Datasheet




 CER6080
www.DataSheet4U.com
CER6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45m@VGS = 10V.
RDS(ON) = 75m@VGS = 4.5V.
-60V, -3.3A, RDS(ON) = 130m@VGS = -10V.
RDS(ON) = 180m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D1 D1 D2 D2
87 65
5
DIP-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 5.6
IDM 20
P-Channel
-60
±20
-3.3
-15
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com




 CER6080
CER6080
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5.6A
VGS = 4.5V, ID = 4.4A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 15V, ID = 5.6A
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 5.6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
60
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
35 45 m
60 75 m
14 S
750 pF
105 pF
65 pF
15 30 ns
4 15 ns
37 80 ns
5 15 ns
22 29 nC
3.0 nC
4.5 nC
5.6 A
1.2 V
6
2




 CER6080
CER6080
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.3A
VGS = -4.5V, ID = -2.6A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = -15V, ID = -3.3A
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.3A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
105 130 m
135 180 m
8S
890 pF
85 pF
85 pF
11 20
35
30 60
4 10
10.7 14
2.1
1.1
ns
ns
ns
ns
nC
nC
nC
-3.3 A
-1.2 V
6
3






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