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PLANAR TRANSISTOR. GSC1384 Datasheet

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PLANAR TRANSISTOR. GSC1384 Datasheet






GSC1384 TRANSISTOR. Datasheet pdf. Equivalent




GSC1384 TRANSISTOR. Datasheet pdf. Equivalent





Part

GSC1384

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2003/10 /24 REVISED DATE :2004/11/29B GSC1384 Description Features N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSC1384 is designed for power ampli fier and driver. *Low collector to emi tter saturation voltage VCE(sat). *Comp lementary pair with GSA684 Package Dim ensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L .
Manufacture

GTM

Datasheet
Download GSC1384 Datasheet


GTM GSC1384

GSC1384; e1 e b C A S1 b b1 C Millimeter Min . Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.7 6 0.36 0.51 REF. D E L e1 e Millimete r Min. Max. 4.44 4.7 3.30 3.81 12.70 1. 150 1.390 2.42 2.66 Absolute Maximum R atings (Ta = 25 Parameter ,unless othe rwise specified) Ratings Unit Collecto r to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Colle.


GTM GSC1384

ct Current*(Pulse) Junction Temperature Storage Temperature Range Total Power D issipation VCBO VCEO VEBO IC ICP Tj Ts TG PD 60 50 5 1 1.5 +150 -55 ~ +150 1 V V V A A W Electrical Characteristi cs (Ta = 25 Symbol VCBO VCEO VEBO ICBO VCE(sat) VBE(sat) *hFE1 *hFE2 fT Cob Mi n. 60 50 5 85 50 Typ. 200 0.85 160 100 200 11 ,unless otherwise specified) Ma x. 0.1 400 1.2 340.


GTM GSC1384

20 Unit V V V uA mV V Test Conditions I C=10uA,IE=0 IC=2mA,IB=0 IE=10uA,IC=0 VC B=20V,IE=0 lC=0.5A,IB=50mA(note) IC=0.5 A, IB=50mA(note) VCE=10V,IC=500mA(note) VCE=5V,IC=1A(note) VCE=10V,IB=-50mA,f= 200MHz VCB=10V,IE=0,f=1MHz MHz pF Not e: Pulse measurement Classification Of hFE1 Rank Range Q 85-170 R 120-240 S 1 70-340 1/3 ISSUED DATE :2003/10/24 RE VISED DATE :2004/1.

Part

GSC1384

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2003/10 /24 REVISED DATE :2004/11/29B GSC1384 Description Features N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSC1384 is designed for power ampli fier and driver. *Low collector to emi tter saturation voltage VCE(sat). *Comp lementary pair with GSA684 Package Dim ensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L .
Manufacture

GTM

Datasheet
Download GSC1384 Datasheet




 GSC1384
www.DataSheet4U.com
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
GSC1384
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSC1384 is designed for power amplifier and driver.
Features
*Low collector to emitter saturation voltage VCE(sat).
*Complementary pair with GSA684
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
VCBO
VCEO
VEBO
IC
ICP
Tj
TsTG
PD
Ratings
60
50
5
1
1.5
+150
-55 ~ +150
1
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
VCBO 60 -
VCEO 50 -
VEBO
5-
ICBO
--
VCE(sat)
- 200
VBE(sat)
- 0.85
*hFE1
85 160
*hFE2
50 100
fT - 200
Cob - 11
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA,IE=0
- V IC=2mA,IB=0
- V IE=10uA,IC=0
0.1 uA VCB=20V,IE=0
400 mV lC=0.5A,IB=50mA(note)
1.2 V IC=0.5A, IB=50mA(note)
340 VCE=10V,IC=500mA(note)
- VCE=5V,IC=1A(note)
-
MHz
VCE=10V,IB=-50mA,f=200MHz
20 pF VCB=10V,IE=0,f=1MHz
Note: Pulse measurement
Classification Of hFE1
Rank
Q
Range
85-170
R
120-240
S
170-340
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 GSC1384
Characteristics Curve
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
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 GSC1384
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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