GSC1473A

www.DataSheet4U.com ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B GSC1473A Description Features NPN SILICON TRANSISTOR The GSC1473A is designed for general amplification. High Collector to Emitter Voltage VCEO High Transition Frequency fT D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Peak Collector Current Collector Current (continuous) Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO ICP IC PD TJ Tstg Ratings 300 300 7 100 70 750 150 -55 ~ +150 Unit V V V mA mA mW Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICEO VCE(sat) hFE fT Cob Min. 300 300 7 30 50 Typ. 80 - unless otherwise noted) Max. 1 1.2 220 10 MHz pF Unit V V V uA V IC=100uA, IE=0 IC=1mA, IB=0 IE=1uA, IC =0 VCE=120V IC=50mA, IB=5mA VCE=10V, IC =5mA VCE=10V, IC =-10mA, f=200MHz VCB=10V, f=1MHz Test Conditions Classification Of hFE Rank hFE P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 1/2 ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B Characteristics Curve VCE=10v Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes...