GSC1815

www.DataSheet4U.com CORPORATION GSC1815 Description Features *Complementary to GSA1015 ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B NPN EPITAXIAL PLANAR TANSISTOR The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55 ~ +150 60 50 5 150 50 400 V V V mA mA mW Unit Characteristics at Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE1 hFE2 fT Cob Min. 60 50 5 70 25 80 Typ. 0.1 Max. 100 100 0.25 1.0 700 3.0 MHz pF Unit V V V nA nA V V IC=100uA IC=1mA IE=10uA VCE=60V, IE = 0 VEB=5V, Ic = 0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC =1mA, f=100MHz VCB=10V, IE = 0,f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 L 350-700 GSC1815 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproducti...