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POWER MOSFET. GSC4409 Datasheet

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POWER MOSFET. GSC4409 Datasheet






GSC4409 MOSFET. Datasheet pdf. Equivalent




GSC4409 MOSFET. Datasheet pdf. Equivalent





Part

GSC4409

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4409 Datasheet


GTM GSC4409

GSC4409; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/10/19 REVISED DA TE : GSC4409 P-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID -30V 7.5m -15A The GSC4409 uses advanced tr ench technology to provide excellent on -resistance and ultra low gate charge. The SOP-8 package is universally prefer red for all commercial-industrial surfa ce mount applicati.


GTM GSC4409

ons and suited for use as a load switch or in PWM applications. *Simple Drive R equirement *Lower On-resistance *Fast S witching Characteristic Description F eatures Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0 .90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27.


GTM GSC4409

TYP. Absolute Maximum Ratings Paramete r Drain-Source Voltage Gate-Source Volt age Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 ±2 0 -15 -12.8 -80 2.5 0.02 -55 ~ +150 Un it V V A A A W W/ Total Power Dissipat ion Linear Derating Factor Operating Ju nction and Storage .



Part

GSC4409

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4409 Datasheet




 GSC4409
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/19
REVISED DATE :
GSC4409
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
7.5m
-15A
Description
The GSC4409 uses advanced trench technology to provide excellent on-resistance and ultra low gate charge.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-15
-12.8
-80
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4409
Page: 1/4





 GSC4409
ISSUED DATE :2006/10/19
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
-30
-1.4
-
-
- - V VGS=0, ID=-250uA
- -2.7 V VDS=VGS, ID=-250uA
50 -
S VDS=-5V, ID=-15A
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- -5 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 7.5 m VGS=-10V, ID=-15A
- 12
VGS=-4.5V, ID=-10A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 100 120
ID=-15A
Qgs
- 14.5 -
nC VDS=-15V
Qgd - 23 -
VGS=-10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 14 -
- 16.5 -
- 76.5 -
- 37.5 -
VDS=-15V
ns
VGS=-10V
RG=3
RL=1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 5270 6400
VGS=0V
- 945 -
pF VDS=-15V
- 745 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
IS
Trr
Qrr
Min.
-
-
-
-
Typ.
-
-
36.7
28
Max.
-1.0
-5
-
-
Unit Test Conditions
V IS=-1.0A, VGS=0V
A VD= VG=0V, VS=-1.0V
ns IS=-15A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC4409
Page: 2/4





 GSC4409
Characteristics Curve
ISSUED DATE :2006/10/19
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
100
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 4. On-Resistance v.s.
Junction Temperature
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GSC4409
Page: 3/4



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