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POWER MOSFET. GSC4410 Datasheet

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POWER MOSFET. GSC4410 Datasheet






GSC4410 MOSFET. Datasheet pdf. Equivalent




GSC4410 MOSFET. Datasheet pdf. Equivalent





Part

GSC4410

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/01 REVISED DA TE :2005/09/30B GSC4410 N-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID 30V 13.5m 10A The GSC4410 provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC4410 Datasheet


GTM GSC4410

GSC4410; all commercial-industrial surface mount applications and suited for low voltag e applications such as DC/DC converters . *Dynamic dv/dt Rating *Simple Drive R equirement *Repetitive Avalanche Rated *Fast Switching Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0 .40 0.19 6.20 5.00 4.00 8 0.90 0.25 RE F. M H L J K G Mi.


GTM GSC4410

llimeter Min. Max. 0.10 0.25 0.35 0.49 1 .35 1.75 0.375 REF. 45 1.27 TYP. Absol ute Maximum Ratings Parameter Drain-Sou rce Voltage Gate-Source Voltage Continu ous Drain Current, VGS@10V Continuous D rain Current, VGS@10V Pulsed Drain Curr ent 1 Symbol VDS VGS ID @TA=25 ID @TA= 70 IDM PD @TA=25 Tj, Tstg Ratings 30 2 0 10 8 50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total.


GTM GSC4410

Power Dissipation Linear Derating Facto r Operating Junction and Storage Temper ature Range Thermal Data Parameter The rmal Resistance Junction-ambient Max. S ymbol Rthj-amb Value 50 Unit /W GSC441 0 Page: 1/5 ISSUED DATE :2005/03/01 R EVISED DATE :2005/09/30B Electrical Ch aracteristics(Tj = 25 Parameter Drain-S ource Breakdown Voltage Breakdown Volta ge Temperature Coe.

Part

GSC4410

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/01 REVISED DA TE :2005/09/30B GSC4410 N-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID 30V 13.5m 10A The GSC4410 provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC4410 Datasheet




 GSC4410
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
GSC4410
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
13.5m
10A
Description
The GSC4410 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
20
10
8
50
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4410
Page: 1/5




 GSC4410
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.037
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 20 -
S VDS=15V, ID=10A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
11.5 13.5
m
16.5 20
VGS=10V, ID=10A
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 20 -
ID=10A
Qgs - 3 - nC VDS=15V
Qgd - 11 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 7.5 -
- 10.2 -
- 29 -
- 33 -
VDS=25V
ID=1A
ns VGS=5V
RG=3.3
RD=25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 955 -
- 555 -
- 204 -
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
2.3
50
Unit Test Conditions
V IS=2.3A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GSC4410
Page: 2/5




 GSC4410
Characteristics Curve
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSC4410
Fig 6. Type Power Dissipation
Page: 3/5






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