DatasheetsPDF.com

POWER MOSFET. GSC4411 Datasheet

DatasheetsPDF.com

POWER MOSFET. GSC4411 Datasheet






GSC4411 MOSFET. Datasheet pdf. Equivalent




GSC4411 MOSFET. Datasheet pdf. Equivalent





Part

GSC4411

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4411 Datasheet


GTM GSC4411

GSC4411; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/09/30 REVISED DA TE : G S C 4 4 11 P-CHANNEL ENHANCEMEN T MODE POWER MOSFET BVDSS RDS(ON) ID -30V 25m -8.2A The GSC4411 provide the designer with the best combination of fast switching, ruggedized device desig n, low on-resistance and cost-effective ness. The SOP-8 package is universally preferred for all .


GTM GSC4411

commercial-industrial surface mount appl ications and suited for low voltage app lications such as DC/DC converters. *Si mple Drive Requirement *Lower On-resist ance *Fast Switching Description Feat ures Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.8 0 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min . Max. 0.10 0.25 0.3.


GTM GSC4411

5 0.49 1.35 1.75 0.375 REF. 45° 1.27 TY P. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current Continuous D rain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 ID M PD @TA=25 Tj, Tstg Ratings -30 ±25 -8.2 -6.5 -40 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipatio n Linear Derating Fa.



Part

GSC4411

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4411 Datasheet




 GSC4411
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/09/30
REVISED DATE :
GSC4411
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
25m
-8.2A
Description
The GSC4411 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±25
-8.2
-6.5
-40
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4411
Page: 1/4





 GSC4411
ISSUED DATE :2005/09/30
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
-30
-
-
BVDSS / Tj - -0.016 -
VGS(th) -1.0 - -3.0
gfs - 8 -
IGSS - - ±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-8A
nA VGS=±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 25 m VGS=-10V, ID=-8A
- 40
VGS=-4.5V, ID=-4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 14 20
ID=-8A
Qgs - 1.7 - nC VDS=-24V
Qgd - 10.5 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 12 -
VDS=-15V
Tr
Td(off)
-
-
7
34
-
-
ID=-1A
ns VGS=-10V
RG=3.3
Tf - 28 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 855 1360
VGS=0V
- 296 -
pF VDS=-25V
- 195 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
28
21
Max.
-1.2
-
-
Unit Test Conditions
V IS=-2A, VGS=0V
ns IS=-8A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC4411
Page: 2/4





 GSC4411
Characteristics Curve
ISSUED DATE :2005/09/30
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSC4411
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4



Recommended third-party GSC4411 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)