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POWER MOSFET. GSC4411DY Datasheet

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POWER MOSFET. GSC4411DY Datasheet






GSC4411DY MOSFET. Datasheet pdf. Equivalent




GSC4411DY MOSFET. Datasheet pdf. Equivalent





Part

GSC4411DY

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/10/02 REVISED DA TE : G S C 4 4 11 D Y P-CHANNEL ENHANC EMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 10m -14A The GSC4411DY provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC4411DY Datasheet


GTM GSC4411DY

GSC4411DY; all commercial-industrial surface mount applications and suited for low voltag e applications such as DC/DC converters . *Simple Drive Requirement *Lower On-r esistance *Fast Switching Characteristi c Description Features Package Dimen sions REF. A B C D E F Millimeter Min . Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. .


GTM GSC4411DY

Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ra tings Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Curr ent Continuous Drain Current Pulsed Dra in Current 1 3 3 Symbol VDS VGS ID @TA =25 ID @TA=70 IDM PD @TA=25 Tj, Tstg R atings -30 ±20 -14 -8.9 -50 2.5 0.02 - 55 ~ +150 Unit V V A A A W W/ Total P ower Dissipation Li.


GTM GSC4411DY

near Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junct ion-ambient 3 Symbol Max. Rthj-amb Va lue 50 Unit /W GSC4411DY Page: 1/4 ISSUED DATE :2006/10/02 REVISED DATE : Electrical Characteristics (Tj = 25 Pa rameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficie nt unless otherwi.

Part

GSC4411DY

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/10/02 REVISED DA TE : G S C 4 4 11 D Y P-CHANNEL ENHANC EMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 10m -14A The GSC4411DY provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC4411DY Datasheet




 GSC4411DY
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/02
REVISED DATE :
GSC4411DY
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
10m
-14A
Description
The GSC4411DY provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-14
-8.9
-50
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4411DY
Page: 1/4




 GSC4411DY
ISSUED DATE :2006/10/02
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.03
-
26
-
-
-
-3.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-13A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 10 m VGS=-10V, ID=-14A
- 13
VGS=-4.5V, ID=-11A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 37 60
ID=-14A
Qgs - 3 - nC VDS=-24V
Qgd - 25 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 13 -
VDS=-15V
Tr
Td(off)
-
-
11
58
-
-
ID=-1A
ns VGS=-10V
RG=3.3
Tf - 43 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2860 4580
VGS=0V
- 950 -
pF VDS=-25V
- 640 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
48
46
Max.
-1.2
-
-
Unit Test Conditions
V IS=-2.7A, VGS=0V
ns IS=-14A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC4411DY
Page: 2/4




 GSC4411DY
Characteristics Curve
ISSUED DATE :2006/10/02
REVISED DATE :
Fig 1. Typical Output Characteristics
12
-14
11
Fig 2. Typical Output Characteristics
10
9
8
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSC4411DY
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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