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POWER MOSFET. GSC4412 Datasheet

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POWER MOSFET. GSC4412 Datasheet






GSC4412 MOSFET. Datasheet pdf. Equivalent




GSC4412 MOSFET. Datasheet pdf. Equivalent





Part

GSC4412

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : GSC4412 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 3 3m 7A The GSC4412 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC4412 Datasheet


GTM GSC4412

GSC4412; l-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Driv e Requirement *Low Gate Charge *Fast Sw itching *RoHS Compliant Description F eatures Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0 .90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 .


GTM GSC4412

0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current Continuou s Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 25 ±2 0 7 5.8 30 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation L inear Derating Facto.


GTM GSC4412

r Operating Junction and Storage Tempera ture Range Thermal Data Parameter Ther mal Resistance Junction-ambient 3 Symb ol Max. Rthj-amb Value 50 Unit /W GS C4412 Page: 1/5 ISSUED DATE :2006/01/ 10 REVISED DATE : Electrical Character istics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Tem perature Coefficient unless otherwise specified) Min. 25.

Part

GSC4412

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : GSC4412 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 3 3m 7A The GSC4412 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC4412 Datasheet




 GSC4412
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/10
REVISED DATE :
GSC4412
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
33m
7A
Description
The GSC4412 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
*RoHS Compliant
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
25
±20
7
5.8
30
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4412
Page: 1/5




 GSC4412
ISSUED DATE :2006/01/10
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.03
-
12
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=15V, ID=7A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 33 m VGS=10V, ID=7A
- 60
VGS=4.5V, ID=3.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 7 -
ID=7A
Qgs - 1.5 - nC VDS=16V
Qgd - 5 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-7-
- 22 -
- 14.5 -
-6-
VDS=16V
ID=7A
ns VGS=10V
RG=3.3
RD=2.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 218 -
- 155 -
- 63 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.2
2.08
Unit Test Conditions
V IS=2.3A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125
/W when mounted on Min. copper pad.
GSC4412
Page: 2/5




 GSC4412
Characteristics Curve
ISSUED DATE :2006/01/10
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSC4412
Fig 6. Type Power Dissipation
Page: 3/5






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