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POWER MOSFET. GSC4418 Datasheet

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POWER MOSFET. GSC4418 Datasheet






GSC4418 MOSFET. Datasheet pdf. Equivalent




GSC4418 MOSFET. Datasheet pdf. Equivalent





Part

GSC4418

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/10/27 REVISED DA TE : GSC4418 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 1 4m 11.5A Description The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate ch arge. The SOP-8 package is universally preferred for all commercial-industrial surface mount app.
Manufacture

GTM

Datasheet
Download GSC4418 Datasheet


GTM GSC4418

GSC4418; lications and suited for use as a load s witch or in PWM applications. *Simple D rive Requirement *Lower On-resistance * Fast Switching Characteristic Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.2 5 REF. M H L J K G Millimeter Min. Ma x. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. .


GTM GSC4418

Absolute Maximum Ratings Parameter Drain -Source Voltage Gate-Source Voltage Con tinuous Drain Current , VGS@20V Continu ous Drain Current , VGS@20V Pulsed Drai n Current 1 3 3 Symbol VDS VGS ID @TA= 25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ra tings 30 ±25 11.5 9.7 40 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Powe r Dissipation Linear Derating Factor Op erating Junction an.


GTM GSC4418

d Storage Temperature Range Thermal Dat a Parameter Thermal Resistance Junction -ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4418 Page: 1/4 ISSUED DAT E :2006/10/27 REVISED DATE : Electrica l Characteristics (Tj = 25 Parameter Dr ain-Source Breakdown Voltage Gate Thres hold Voltage Forward Transconductance G ate-Source Leakage Current Drain-Source Leakage Current(T.

Part

GSC4418

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/10/27 REVISED DA TE : GSC4418 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 1 4m 11.5A Description The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate ch arge. The SOP-8 package is universally preferred for all commercial-industrial surface mount app.
Manufacture

GTM

Datasheet
Download GSC4418 Datasheet




 GSC4418
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/27
REVISED DATE :
GSC4418
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
14m
11.5A
Description
The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@20V
Continuous Drain Current3, VGS@20V
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±25
11.5
9.7
40
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4418
Page: 1/4




 GSC4418
ISSUED DATE :2006/10/27
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
30
1.5
-
-
- - V VGS=0, ID=250uA
- 3.0 V VDS=VGS, ID=250uA
22 -
S VDS=5V, ID=10A
- ±100 nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
-
-
1 uA VDS=30V, VGS=0
5 uA VDS=24V, VGS=0
- - 14
VGS=20V, ID=11.5A
Static Drain-Source On-Resistance RDS(ON)
-
- 17 m VGS=10V, ID=10.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 40
VGS=4.5V, ID=5.0A
- 8.6 -
ID=11.5A
- 2.5 - nC VDS=15V
- 4.9 -
VGS=4.5V
- 5.4 -
- 5.1 -
- 14.4 -
- 3.7 -
VDS=15V
ns
VGS=10V
RG=3
RL=1.3
- 758 -
- 180 -
- 128 -
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
IS
Trr
Qrr
Min.
-
-
-
-
Typ.
-
-
16.9
6.6
Max.
1.0
4.3
-
-
Unit Test Conditions
V IS=1.0A, VGS=0V
A VD= VG=0V, VS=1.0V
ns IS=11.5A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125
/W when mounted on Min. copper pad.
GSC4418
Page: 2/4




 GSC4418
Characteristics Curve
ISSUED DATE :2006/10/27
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GSC4418
Page: 3/4






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