GSC4420

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/19 REVISED DATE : GSC4420 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 10.5m 13.7A The GSC4420 uses advanced trench technology to provide excellent on-resistance, shoot-through immunity and body diode characteristics. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a synchronous switch or in PWM applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 ±12 13.7 9.7 60 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4420 Page: 1/4 ISSUED DATE :2006/10/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source...