P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
GSC4435
P-CHANNEL ENHANC...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
GSC4435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 20m -8A
The GSC4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching
Description
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings -30 20 -8 -6 -50 2.5 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W
GSC4435
Page: 1/5
ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -30 -1.0 Typ. -0.037 2...
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