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POWER MOSFET. GSC4435 Datasheet

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POWER MOSFET. GSC4435 Datasheet







GSC4435 MOSFET. Datasheet pdf. Equivalent




GSC4435 MOSFET. Datasheet pdf. Equivalent





Part

GSC4435

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4435 Datasheet


GTM GSC4435

GSC4435; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/02 REVISED DA TE :2005/09/30B GSC4435 P-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID -30V 20m -8A The GSC4435 provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and cost-effec tiveness. The SOP-8 package is universa lly preferred for .


GTM GSC4435

all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-re sistance *Fast Switching Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min . Max. 0.10 0.25 0.


GTM GSC4435

.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TY P. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current Continuous D rain Current Pulsed Drain Current 1 Sy mbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 20 -8 -6 -50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear D erating Factor Ope.



Part

GSC4435

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GSC4435 Datasheet




 GSC4435
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/02
REVISED DATE :2005/09/30B
GSC4435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
20m
-8A
Description
The GSC4435 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
20
-8
-6
-50
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4435
Page: 1/5





 GSC4435
ISSUED DATE :2005/03/02
REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
-30
-
-
BVDSS / Tj - -0.037 -
VGS(th) -1.0 - -3.0
gfs - 20 -
IGSS - - 100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-8A
nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -5 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 20 m VGS=-10V, ID=-8A
- 35
VGS=-4.5V, ID=-5A
47 -
ID=-4.6A
9.5 - nC VDS=-15V
8-
VGS=-10V
- 30
VDS=-15V
- 20
ID=-1A
-
120
ns VGS=-10V
RG=6
- 80
RD=15
- 2800
VGS=0V
- 1400 pF VDS=-15V
- 350
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-0.75
-
-
Max.
-1.2
-2.1
-50
Unit Test Conditions
V IS=-2.1A, VGS=0V, Tj=25
A VD=VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GSC4435
Page: 2/5





 GSC4435
Characteristics Curve
ISSUED DATE :2005/03/02
REVISED DATE :2005/09/30B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSC4435
Fig 6. Type Power Dissipation
Page: 3/5



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