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POWER MOSFET. GSC6618 Datasheet

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POWER MOSFET. GSC6618 Datasheet






GSC6618 MOSFET. Datasheet pdf. Equivalent




GSC6618 MOSFET. Datasheet pdf. Equivalent





Part

GSC6618

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : GSC6618 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 3 0m 7A The GSC6618 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC6618 Datasheet


GTM GSC6618

GSC6618; l-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Driv e Requirement *Low Gate Charge *Fast Sw itching Characteristic Description Fe atures Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3 .80 0° 0.40 0.19 6.20 5.00 4.00 8° 0. 90 0.25 REF. M H L J K G Millimeter M in. Max. 0.10 0.25 0.


GTM GSC6618

.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Paramete r Drain-Source Voltage Gate-Source Volt age Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 ±20 7 5.8 30 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Li near Derating Factor.


GTM GSC6618

Operating Junction and Storage Temperat ure Range Thermal Data Parameter Therm al Resistance Junction-ambient 3 Symbo l Max. Rthj-amb Value 50 Unit /W GSC 6618 Page: 1/4 ISSUED DATE :2006/01/1 0 REVISED DATE : Electrical Characteri stics (Tj = 25 Parameter Drain-Source B reakdown Voltage Breakdown Voltage Temp erature Coefficient unless otherwise s pecified) Min. 30 .

Part

GSC6618

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : GSC6618 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 3 0m 7A The GSC6618 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC6618 Datasheet




 GSC6618
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/10
REVISED DATE :
GSC6618
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
30m
7A
Description
The GSC6618 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±20
7
5.8
30
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC6618
Page: 1/4




 GSC6618
ISSUED DATE :2006/01/10
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.02
-
13
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=7A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 30 m VGS=10V, ID=7A
- 50
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 8.4 13
ID=7A
Qgs - 2.1 - nC VDS=24V
Qgd - 4.7 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-6-
- 5.2 -
- 18.8 -
- 4.4 -
VDS=15V
ID=1A
ns VGS=10V
RG=3.3
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 645 800
VGS=0V
- 150 -
pF VDS=25V
- 95 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16
10
Max.
1.2
-
-
Unit Test Conditions
V IS=2A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC6618
Page: 2/4




 GSC6618
Characteristics Curve
ISSUED DATE :2006/01/10
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSC6618
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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