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POWER MOSFET. GSC6679 Datasheet

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POWER MOSFET. GSC6679 Datasheet






GSC6679 MOSFET. Datasheet pdf. Equivalent




GSC6679 MOSFET. Datasheet pdf. Equivalent





Part

GSC6679

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/04 REVISED DA TE :2006/10/27C GSC6679 P-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID -30V 10m -14A The GSC6679 provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC6679 Datasheet


GTM GSC6679

GSC6679; all commercial-industrial surface mount applications and suited for low voltag e applications such as DC/DC converters . *Simple Drive Requirement *Lower On-r esistance *Fast Switching Characteristi c Description Features Package Dimen sions REF. A B C D E F Millimeter Min . Max. 5.80 4.80 3.80 0° 0.40 0.19 6.2 0 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min.


GTM GSC6679

. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.3 75 REF. 45° 1.27 TYP. Absolute Maximu m Ratings Parameter Drain-Source Voltag e Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tst g Ratings -30 ±25 -14 -8.9 -50 2.5 0. 02 -55 ~ +150 Unit V V A A A W W/ Tot al Power Dissipation.


GTM GSC6679

Linear Derating Factor Operating Juncti on and Storage Temperature Range Therm al Data Parameter Thermal Resistance Ju nction-ambient 3 Symbol Max. Rthj-amb Value 50 Unit /W GSC6679 Page: 1/4 ISSUED DATE :2005/08/04 REVISED DATE : 2006/10/27C Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakd own Voltage Breakdown Voltage Temperatu re Coefficient un.

Part

GSC6679

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/04 REVISED DA TE :2006/10/27C GSC6679 P-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID -30V 10m -14A The GSC6679 provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The SOP-8 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GSC6679 Datasheet




 GSC6679
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/04
REVISED DATE :2006/10/27C
GSC6679
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
10m
-14A
Description
The GSC6679 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±25
-14
-8.9
-50
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC6679
Page: 1/4




 GSC6679
ISSUED DATE :2005/08/04
REVISED DATE :2006/10/27C
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.03
-
26
-
-
-
-3.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-14A
nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 10 m VGS=-10V, ID=-14A
- 13
VGS=-4.5V, ID=-11A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 37 60
ID=-14A
Qgs - 3 - nC VDS=-24V
Qgd - 25 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 13 -
VDS=-15V
Tr
Td(off)
-
-
11
58
-
-
ID=-1A
ns VGS=-10V
RG=3.3
Tf - 43 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2860 4580
VGS=0V
- 950 -
pF VDS=-25V
- 640 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
48
46
Max.
-1.2
-
-
Unit Test Conditions
V IS=-2A, VGS=0V
ns IS=-14A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC6679
Page: 2/4




 GSC6679
Characteristics Curve
ISSUED DATE :2005/08/04
REVISED DATE :2006/10/27C
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSC6679
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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