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POWER MOSFET. GSC7811 Datasheet

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POWER MOSFET. GSC7811 Datasheet






GSC7811 MOSFET. Datasheet pdf. Equivalent




GSC7811 MOSFET. Datasheet pdf. Equivalent





Part

GSC7811

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : G S C 7 8 11 N-CHANNEL ENHANCEMEN T MODE POWER MOSFET BVDSS RDS(ON) ID 25V 12m 11.8A The GSC7811 provide the designer with the best combination of f ast switching, ruggedized device design , low on-resistance and cost-effectiven ess. The SOP-8 package is universally p referred for all c.
Manufacture

GTM

Datasheet
Download GSC7811 Datasheet


GTM GSC7811

GSC7811; ommercial-industrial surface mount appli cations and suited for low voltage appl ications such as DC/DC converters. *Sim ple Drive Requirement *Low On-resistanc e *Fast Switching Characteristic Descr iption Features Package Dimensions R EF. A B C D E F Millimeter Min. Max. 5 .80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4 .00 8° 0.90 0.25 REF. M H L J K G Mi llimeter Min. Max. 0.


GTM GSC7811

.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Rating s Parameter Drain-Source Voltage Gate-S ource Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain C urrent 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratin gs 25 ±12 11.8 9.4 30 2.5 0.02 -55 ~ + 150 Unit V V A A A W W/ Total Power D issipation Linear De.


GTM GSC7811

rating Factor Operating Junction and Sto rage Temperature Range Thermal Data Pa rameter Thermal Resistance Junction-amb ient 3 Symbol Max. Rthj-amb Value 50 Unit /W GSC7811 Page: 1/5 ISSUED DA TE :2006/01/10 REVISED DATE : Electric al Characteristics (Tj = 25 Parameter D rain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unles s otherwise specif.

Part

GSC7811

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/10 REVISED DA TE : G S C 7 8 11 N-CHANNEL ENHANCEMEN T MODE POWER MOSFET BVDSS RDS(ON) ID 25V 12m 11.8A The GSC7811 provide the designer with the best combination of f ast switching, ruggedized device design , low on-resistance and cost-effectiven ess. The SOP-8 package is universally p referred for all c.
Manufacture

GTM

Datasheet
Download GSC7811 Datasheet




 GSC7811
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/10
REVISED DATE :
GSC7811
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
12m
11.8A
Description
The GSC7811 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
25
±12
11.8
9.4
30
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC7811
Page: 1/5




 GSC7811
ISSUED DATE :2006/01/10
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
0.5
-
-
- - V VGS=0, ID=250uA
0.1 - V/ Reference to 25 , ID=1mA
- 1.2 V VDS=VGS, ID=250uA
30 -
S VDS=15V, ID=11.8A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
10 12 m VGS=4.5V, ID=11.8A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 32 -
ID=11.8A
Qgs - 2.6 - nC VDS=20V
Qgd - 15.5 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 12 -
VDS=15V
Tr
Td(off)
-
-
28
41
-
-
ID=1.5A
ns VGS=15V
RG=3.3
Tf - 40 -
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 800 -
- 460 -
- 215 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.2
2.08
Unit Test Conditions
V IS=2.3A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
GSC7811
Page: 2/5




 GSC7811
Characteristics Curve
ISSUED DATE :2006/01/10
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GSC7811
Fig 6. Type Power Dissipation
Page: 3/5






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