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SILICON TRANSISTOR. GSC945 Datasheet

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SILICON TRANSISTOR. GSC945 Datasheet






GSC945 TRANSISTOR. Datasheet pdf. Equivalent




GSC945 TRANSISTOR. Datasheet pdf. Equivalent





Part

GSC945

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/06 /14 REVISED DATE : GSC945 Description Features NPN EPITAXIAL SILICON TRANSIS TOR The GSC945 is an audio frequency a mplifier high frequency OSC NPN transis tor. Collector-Emitter Voltage BVCBO=50 V Collector current up to 150mA High hF E linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L RE F. A S1 b b1 C e1.
Manufacture

GTM

Datasheet
Download GSC945 Datasheet


GTM GSC945

GSC945; e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 RE F. D E L e1 e Millimeter Min. Max. 4.4 4 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Co llector to Emitter Voltage Emitter to B ase Voltage Collector Current Base Curr ent Total Device Dissipation Junction T emperature Storage.


GTM GSC945

Temperature Symbol VCBO VCEO VEBO IC IB PD TJ Tstg Ratings 60 50 5 150 50 250 125 -55 ~ +150 Unit V V V mA mA mW Ele ctrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) h FE fT Cob NF Min. 60 50 5 90 100 Typ. 0 .1 190 2.0 4.0 unless otherwise noted) Max. 100 100 0.3 600 3.0 6.0 MHz pF dB Unit V V V nA nA V IC=100uA, IE=0 IC=1 mA, IB=0 IE=1uA, I.


GTM GSC945

C =0 VCB=40V VEB=3V IC=100mA, IB=10mA VC E=6V, IC=1mA VCE=10V, IC =50mA VCB=10V, IE=0, f=1MHz IC=0.1mA , VCE=6V, RG=10k , f=100HZ Test Conditions Classificat ion Of hFE Rank Range R 90 ~ 180 Q 135 ~ 270 P 200 ~ 400 K 300 ~ 600 1/2 ISS UED DATE :2005/06/14 REVISED DATE : Ch aracteristics Curve Important Notice: All rights are reserved. Reproduction i n whole or in part.

Part

GSC945

Description

NPN EPITAXIAL SILICON TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/06 /14 REVISED DATE : GSC945 Description Features NPN EPITAXIAL SILICON TRANSIS TOR The GSC945 is an audio frequency a mplifier high frequency OSC NPN transis tor. Collector-Emitter Voltage BVCBO=50 V Collector current up to 150mA High hF E linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L RE F. A S1 b b1 C e1.
Manufacture

GTM

Datasheet
Download GSC945 Datasheet




 GSC945
www.DataSheet4U.com
ISSUED DATE :2005/06/14
REVISED DATE :
GSC945
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.
Features
Collector-Emitter Voltage BVCBO=50V
Collector current up to 150mA
High hFE linearity
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
60
50
5
150
50
250
125
-55 ~ +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
50 -
BVEBO
5-
ICBO
IEBO
--
--
VCE(sat)
- 0.1
hFE 90 -
fT 100 190
Cob - 2.0
NF - 4.0
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=1uA, IC=0
100 nA VCB=40V
100 nA VEB=3V
0.3 V IC=100mA, IB=10mA
600 VCE=6V, IC=1mA
-
MHz
VCE=10V, IC=50mA
3.0 pF VCB=10V, IE=0, f=1MHz
6.0 dB IC=0.1mA , VCE=6V, RG=10k , f=100HZ
Classification Of hFE
Rank
R
Range
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
1/2




 GSC945
Characteristics Curve
ISSUED DATE :2005/06/14
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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