GSC945

www.DataSheet4U.com ISSUED DATE :2005/06/14 REVISED DATE : GSC945 Description Features NPN EPITAXIAL SILICON TRANSISTOR The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor. Collector-Emitter Voltage BVCBO=50V Collector current up to 150mA High hFE linearity Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ Tstg Ratings 60 50 5 150 50 250 125 -55 ~ +150 Unit V V V mA mA mW Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob NF Min. 60 50 5 90 100 Typ. 0.1 190 2.0 4.0 unless otherwise noted) Max. 100 100 0.3 600 3.0 6.0 MHz pF dB Unit V V V nA nA V IC=100uA, IE=0 IC=1mA, IB=0 IE=1uA, IC =0 VCB=40V VEB=3V IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=10V, IC =50mA VCB=10V, IE=0, f=1MHz IC=0.1mA , VCE=6V, RG=10k , f=100HZ Test Conditions Classification Of hFE Rank Range R 90 ~ 180 Q 135 ~ 270 P 200 ~ 400 K 300 ~ 600 1/2 ISSUED DATE :2005/06/14 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited witho...