GSD1624

www.DataSheet4U.com GSD1624 Description FEATURES 1/3 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION The GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment . *Adoption of FBET, MBIT processes *Low collector-to-emitter saturation voltage *Fast switching speed *Large current capacity and wide ASO Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings (Ta=25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (PULSE)(note1) Total Power Dissipation Junction Temperature Storage Temperature Note 1:Single pulse,PW=10ms Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob tstg tf Min. 60 50 6 100 - ,unless otherwise specified) Symbol VCBO VCEO VEBO IC IC PD Tj Tstg ,unless otherwise specified) Max. 1 1 0.5 1.2 560 Unit V V V uA uA V V MHz pF ns ns IC=10uA ,IE=0 IC=1mA,RBE= IE=10uA,Ic=0 VCB=40V VEB=4V IC=2A, IB=100mA IC=2A, IB=100mA VCE=2V, IC=0.1A VCE=10V, Ic=50mA VCB=10V, f=1MHz See test circuit See test circuit Test Conditions Ratings 60 50 6 3 6 0.5 +150 -55 ~ +150 Unit V V V A A W ELECTRICAL Characteristics (Ta=25 Typ. 0.19 0.94 150 25 650 35 CLASSIFICATION OF Hfe RANK RANGE 2/3 R 100-200 S 140-280 T 200-400 U 280-5...