www.DataSheet4U.com
ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B
GSD1857
POWER TRANSISTOR
N P N E P I TA X I A L ...
www.DataSheet4U.com
ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B
GSD1857
POWER
TRANSISTOR
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
FEATURES
*High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz)
Package Dimensions
D
E S1
TO-92
A
S E A T IN G PLANE
b1
REF.
L
e1
e
b
C
A S1 b b1 C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings (Ta = 25 )
Parameter Ratings Unit
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation
VCBO VCEO VEBO IC ICP Tj TsTG PD Typ. 80 20 P 82-180 Max. 1 1 400 390 Unit V V V uA uA mV MHz pF
120 120 5 2 3 +150 -55 ~ +150 1 Test Conditions IC=50uA IC=1mA IE=50uA VCB=100V VBE=4V lC=1A,IB=100mA VCE=5V,IC=0.1A VCE=5V,IE=100mA, f=30MHz VCB=10V, IE=0A,f=1MHz
V V V A A
W
Electrical Characteristics (Ta = 25 )
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Rank Range Min. 120 120 5 82 -
Classification Of hFE1
*Measured using pulse current.
Q 120-270
R 180-390
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