www.DataSheet4U.com
ISSUED DATE :2006/01/18 REVISED DATE :
GSD2656
Description Package Dimensions
NPN EPITAXIAL T RANS...
www.DataSheet4U.com
ISSUED DATE :2006/01/18 REVISED DATE :
GSD2656
Description Package Dimensions
NPN EPITAXIAL T RANSISTOR
The GSD2656 is designed for general purpose amplifier applications.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 30 30 6 1 225 Unit
V V V A mW
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) *hFE *fT Cob Min. 30 30 6 120 Typ. 400 5
, unless otherwise noted) Max. Unit 100 100 350 500 MHz pF V V V nA nA mV IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0
Test Conditions
IC=500mA, IB=25mA VCE=2V, IC=100mA VCE=2V, IE=-100mA, f=100MHz VCB=10V, f=1MHz
*Pulsed Test
Classification Of hFE
Rank Range EUC 120 ~ 200 EUD 160 ~ 300 EUE 250 ~ 500
GSD2656
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ISSUED DATE :2006/01/18 REVISED DATE :
Characteristics Curve
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