GSMBT1015

www.DataSheet4U.com ISSUED DATE :2004/12/08 REVISED DATE : GSM BT 1015 Description P NP E PITAXI AL P L ANAR T RANS ISTO R The GSMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -50 -50 -5 -150 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob at Ta = 25 Min. -50 -50 -5 120 25 80 Typ. Max. -100 -100 -300 -1.1 700 7 MHz pF Unit V V V nA nA mV V IC=-100uA IC=-1mA IE=-10uA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz,IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range A4Y 120-140 A4G 200-400 A4B 350-700 1/2 ISSUED DATE :2004/12/08 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its p...