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GSMBT2222A Dataheets PDF



Part Number GSMBT2222A
Manufacturers GTM
Logo GTM
Description TRANSISTOR
Datasheet GSMBT2222A DatasheetGSMBT2222A Datasheet (PDF)

www.DataSheet4U.com CORPORATION G SM BT 2 2 2 2 A Description Features High frequency current gain High speed switching For complementary use with PNP type GSMBT2907A ISSUED DATE :2005/01/12 REVISED DATE : N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF..

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www.DataSheet4U.com CORPORATION G SM BT 2 2 2 2 A Description Features High frequency current gain High speed switching For complementary use with PNP type GSMBT2907A ISSUED DATE :2005/01/12 REVISED DATE : N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 75 40 6 600 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT at Ta = 25 Min. 75 40 6 35 50 75 100 40 300 Typ. Max. 10 10 10 500 1.0 1.2 2.0 300 MHz Unit V V V nA nA nA mV V V V IC=100uA , IE=0 IC=10mA,IB=0 IE=10uA ,IC=0 VCB=60V, IE=0 VCE=60V ,VEB(OFF)=3V VEB=3V IC=380mA, IB=10mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCB=20V, IC=20mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/01/12 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2 .


GSMBT2014 GSMBT2222A GSMBT2907A


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