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GSMBT4075 Dataheets PDF



Part Number GSMBT4075
Manufacturers GTM
Logo GTM
Description TRANSISTOR
Datasheet GSMBT4075 DatasheetGSMBT4075 Datasheet (PDF)

www.DataSheet4U.com ISSUED DATE :2005/07/22 REVISED DATE : GSM BT 4075 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4075 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.) High hFE : hFE = 70~700 Complementary to GSMBT2014 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 RE.

  GSMBT4075   GSMBT4075


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www.DataSheet4U.com ISSUED DATE :2005/07/22 REVISED DATE : GSM BT 4075 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT4075 is designed for general purpose switching and amplifier applications. Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.) High hFE : hFE = 70~700 Complementary to GSMBT2014 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55~+150 60 50 5 150 30 225 Unit V V V mA mA mW Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 70 25 80 Typ. - ) Max. 100 100 250 1 700 3.5 Unit V V V nA nA mV V Test Conditions IC=100uA , IE=0 IC=1mA, IB=0 IE=10uA ,IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle LB 350 - 700 2% MHz pF Classification Of hFE1 Rank Range LO 70 - 140 LY 120 - 240 LG 200 - 400 1/2 ISSUED DATE :2005/07/22 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2 .


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