GSMBT4403

www.DataSheet4U.com CORPORATION G SM BT 4 4 0 3 Description Features Complementary to GSMBT4401 High DC Current Gain: 100-300 at 150mA The GSMBT4403 is designed for general purpose switching and amplifier applications. ISSUED DATE :2004/12/20 REVISED DATE : P NP EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -40 -5 -600 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob at Ta = 25 Min. -40 -40 -5 30 60 100 100 20 200 Typ. Max. -100 -400 -750 -950 -1.3 300 8.5 MHz pF Unit V V V nA mV mV mV V IC=-100uA IC=-1mA IE=-10uA VCE=-35V, V BE=-0.4V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC =-20mA, f=100MHz VCE=-10V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/2 CORPORATION Characteristics Curve ISSU...