GSMBT9014

www.DataSheet4U.com ISSUED DATE :2004/12/20 REVISED DATE : GSM BT 9014 Description Package Dimensions NPN E PITAX I AL T RANSI STOR The GSMBT9014 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 50 45 5 100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *hFE fT Cob at Ta = 25 Min. 50 45 5 0.58 100 150 Typ. 0.14 0.84 0.63 280 270 2.20 Max. 50 50 0.3 1 0.7 1000 3.5 MHz pF Unit V V V nA nA V V V IC=100uA , IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=100mA, IB=5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCB=10V, f=1MHz, IE=0 * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range 3CB 100 - 300 3CC 200 - 600 3CD 400 - 1000 1/3 ISSUED DATE :2004/12/20 REVISED DATE : Characteristics Curve 2/3 ISSUED DATE :2004/12/20 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM rese...