GSMBT9015

www.DataSheet4U.com ISSUED DATE :2004/12/20 REVISED DATE : GSM BT 9015 Description Package Dimensions P NP E PITAX I AL PL ANAR T RANSI STOR The GSMBT9015 is designed for use in pre-amplifier of low level and low noise. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -50 -45 -5 -100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) *hFE fT Cob at Ta = 25 Min. -50 -45 -5 -0.6 100 100 Typ. -0.20 -0.82 -0.65 200 190 4.5 Max. -50 -50 -0.7 -1.0 -0.75 600 7 MHz pF Unit V V V nA nA V V V IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range 3GB 100 - 300 3GC 200 - 600 1/2 ISSUED DATE :2004/12/20 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to ...