C5024

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50  Case: Cell Diode Passivated with Silicon Rubber  Terminal: Copper Disc with Ag Plated  Polarity: Indicated by Large Disc On Cathode Dim Min Max A — 7.55 B — 6.55 Side, Add “R” Suffix to Indicate Reverse Polarity, C 0.75 — i.e. C5020R  Mounting Position: Any  Lead Free: For RoHS / Lead Free Version, D 1.0 — A E — 2.2 All Dimensions in mm Add “-LF” Suffix to Part Number, See Page 2 Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current @TC = 150°C Breakdown Voltage Min. Breakdown Voltage Max. @IR = 100mA @IR = 100mA Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage @IF = 100A Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Symbol VRRM VRWM VR IO VBR IFSM VFM IRM R JA TJ, TSTG C5020 16 20 26 C5024 20 50 24 32 500 1.08 200 1.0 -40 to +150 C5036 32 36 42 Unit V A V A V nA °C/W °C © Won-Top El...