50A AVALANCHE AUTOMOTIVE CELL DIODE
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 2...
Description
®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode
Dim Min Max A — 7.55 B — 6.55
Side, Add “R” Suffix to Indicate Reverse Polarity,
C 0.75 —
i.e. C5020R Mounting Position: Any Lead Free: For RoHS / Lead Free Version,
D 1.0 —
A E — 2.2
All Dimensions in mm
Add “-LF” Suffix to Part Number, See Page 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Output Current
@TC = 150°C
Breakdown Voltage Min. Breakdown Voltage Max.
@IR = 100mA @IR = 100mA
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Forward Voltage
@IF = 100A
Peak Reverse Current At Rated DC Blocking Voltage
@TA = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol VRRM VRWM VR IO VBR
IFSM
VFM IRM R JA TJ, TSTG
C5020 16
20 26
C5024
20
50 24 32
500
1.08 200 1.0 -40 to +150
C5036 32
36 42
Unit V A V
A V nA °C/W °C
© Won-Top El...
Similar Datasheet