C50A

www.DataSheet4U.com WTE POWER SEMICONDUCTORS C50A – C50K Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Side, Add “R” Suffix to Indicate Reverse Polarity, i.e. C50AR Mounting Position: Any Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 2 B C50 Dim Min Max A — 7.40 B — 6.55 C 0.75 — D 1.0 — E — 2.2 All Dimensions in mm A Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 150°C Symbol VRRM VRWM VR VR(RMS) IO C50A @TA=25°C unless otherwise specified C50B C50D C50G C50J C50K Unit 50 100 200 400 600 800 V 35 70 140 50 280 420 560 V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 100A IFSM 500 A VFM 1.08 V @TA = 25°C IRM 3.0 µA Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range RθJA TJ, TSTG 1.0 -40 to +150 °C/W °C C50A – C50K 1 of 2 © 2006 W...