(C50A - C50K) 50A AUTOMOTIVE CELL DIODE
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WTE
POWER SEMICONDUCTORS
C50A – C50K
Pb
50A AUTOMOTIVE CELL DIODE
Features
Diffused Junction Low...
Description
www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
C50A – C50K
Pb
50A AUTOMOTIVE CELL DIODE
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D
Anode +
C E
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated Polarity: Indicated by Large Disc On Cathode Side, Add “R” Suffix to Indicate Reverse Polarity, i.e. C50AR Mounting Position: Any Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 2
B
C50 Dim Min Max A — 7.40 B — 6.55 C 0.75 — D 1.0 — E — 2.2 All Dimensions in mm
A
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 150°C Symbol VRRM VRWM VR VR(RMS) IO C50A
@TA=25°C unless otherwise specified
C50B
C50D
C50G
C50J
C50K
Unit
50
100
200
400
600
800
V
35
70
140 50
280
420
560
V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 100A
IFSM
500
A
VFM
1.08
V
@TA = 25°C
IRM
3.0
µA
Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range
RθJA TJ, TSTG
1.0 -40 to +150
°C/W °C
C50A – C50K
1 of 2
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