HAT1065T Datasheet PDF - Renesas Technology

HAT1065T Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive...

HAT1065T Silicon P Channel MOS FET High Speed Power Switching Features Low on-resistance Capable of –4 V gate drive High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 REJ03G0161-0200 Rev.2.00 Aug 06, 2007 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Page 1 of 3 HAT1065T Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Notes: 4. Pulse test Symb...