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HAT2204C Datasheet, Equivalent, Power Switching.Silicon N Channel MOS FET Power Switching Silicon N Channel MOS FET Power Switching |
　
　
　
| Part | HAT2204C |
|---|---|
| Description | Silicon N Channel MOS FET Power Switching |
| Feature | www. DataSheet4U. com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0 448-0500 Rev. 5. 00 May 10, 2007 Feature s • Low on-resistance RDS(on) = 26m â „¦ typ. (at VGS = 4. 5 V) • Low drive c urrent • High density mounting • 1. 8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package nam e: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. D rain 4. Drain 5. Drain 6. Gate S 1 1 Absolute Maximum Ratings (Ta = 25°C) I tem Drain to Source voltage Gate to Sou rce voltage Drain current Drain peak cu rrent Body - Drain diode reverse Drain current Channel dissipati . |
| Manufacture | Renesas Technology |
| Datasheet |
| Part | HAT2204C |
|---|---|
| Description | Silicon N Channel MOS FET Power Switching |
| Feature | www. DataSheet4U. com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0 448-0500 Rev. 5. 00 May 10, 2007 Feature s • Low on-resistance RDS(on) = 26m â „¦ typ. (at VGS = 4. 5 V) • Low drive c urrent • High density mounting • 1. 8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package nam e: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. D rain 4. Drain 5. Drain 6. Gate S 1 1 Absolute Maximum Ratings (Ta = 25°C) I tem Drain to Source voltage Gate to Sou rce voltage Drain current Drain peak cu rrent Body - Drain diode reverse Drain current Channel dissipati . |
| Manufacture | Renesas Technology |
| Datasheet |
　
　
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