HAT2204C

www.DataSheet4U.com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) Low drive current High density mounting 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg Note1 Ratings 12 ±8 3.5 14 3.5 900 150 –55 to +150 Unit V V A A A mW °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 1 of 7 HAT2204C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes:...