Silicon N-Channel Power MOSFET
HAT2220R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High d...
Description
HAT2220R
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
56 DD
87 65 1234
2
4
G
G
S1 MOS1
S3 MOS2
REJ03G1572-0500 Rev.5.00
Jul 20, 2007
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage Drain current Drain peak current
VDSS
VGSS ID Note1 ID(pulse)Note2
450 ±30 0.7 2.1
Body-drain diode reverse drain current
IDR
0.7
Avalanche current
IAP Note3
0.7
Channel dissipation
Pch Note4
2
Channel dissipation
Pch Note5
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 1 s
2. PW ≤ 10 µs, duty cycle ≤ 1%
3. STch = 25 °C, Tch ≤ 150 °C
4. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
5. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A A W W °C °C
REJ03G1572-0500 Rev.5.00 Jul 20, 2007 Page 1 of 3
HAT2220R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance
V(BR)DSS IDSS IGSS
VGS(off) |yfs|
RDS(on)
450 — — 3.0 0.55 —
— — — — 0.95 5.5
— 1 ±0....
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