HAT2299WP

HAT2299WP Silicon N Channel Power MOS FET Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 5 678 D DDD 4 4 32 1 G REJ03G1528-0100 Rev.1.00 Mar 20, 2007 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 14 28 14 28 14 14.7 25 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.1.00 Mar 20, 2007 page 1 of 6 HAT2299WP Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 150 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 3.0 Forward transfer admittance |yfs| 6 Static drain to source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fa...