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HRL0103C

Renesas Technology

Silicon Schottky Barrier Diode

www.DataSheet4U.com HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Featu...


Renesas Technology

HRL0103C

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www.DataSheet4U.com HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features Low reverse voltage drop and suitable for high efficiency reverse current. Lineup of environmental friendly Halogen free type (HRL0103C-N) Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Ordering Information Part No. HRL0103C HRL0103C-N (Halogen-free type) Laser Mark P Package Name EFP Package Code PXSF0002ZA-A Pin Arrangement Cathode mark Mark 1 P 2 1. Cathode 2. Anode REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Page 1 of 5 HRL0103C Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRM * VR 1 IO * IFM 2 IFSM * Tj Tstg 1 Value 30 30 100 300 1 125 −55 to +125 Unit V V mA mA A °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min — — — — — — Typ — — — — — 800 Max 0.40 0.60 0.1 0.2 8.0 — Unit V V Test Condition IF = 10 mA IF = 100 mA VR = 5 V VR = 10 V VR = 0.5 V, f = 1 MHz 1 Polyimide board * µA pF °C/W Notes: 1. Polyimide board 20h×15w×0.8t 0.3 3.0 0.5 Unit: mm 1.0 2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is co...




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