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RJK6015DPK Dataheets PDF



Part Number RJK6015DPK
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet RJK6015DPK DatasheetRJK6015DPK Datasheet (PDF)

www.DataSheet4U.com RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode rev.

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www.DataSheet4U.com RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 21 63 21 63 6 1.9 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Page 1 of 6 RJK6015DPK Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.315 2600 240 28 40 45 107 40 67 13 29 0.89 430 Max — 1 ±0.1 4.5 0.360 — — — — — — — — — — 1.50 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10.5 A VGS = 10 V RL = 28.6 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 21 A IF = 21 A, VGS = 0 Note4 IF = 21 A, VGS = 0 diF/dt = 100 A/µs REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Page 2 of 6 RJK6015DPK Main Characteristics Power vs. Temperature Derating 400 1000 100 1m 10 µs Maximum Safe Operation Area Pch (W) 300 ID (A) 10 1 0.1 DC Operation (Tc = 25°C) s 10 0µ s Channel Dissipation 200 Drain Current 100 Operation in this area is limited by 0.01 RDS(on) PW = 10 ms (1shot) 0 50 100 150 200 0.001 0.1 Ta = 25°C 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 20 6V 8 V, 10 V 100 5.6 V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 16 5.4 V 20 10 5 2 1 0.5 0.2 0.1 0 2 4 Tc = 75°C 25°C −25°C 6 8 10 12 Drain Current 5.2 V 8 5V 4 VGS = 4.8 V 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance RDS(on) (Ω) 1 VGS = 10 V 0.5 S.


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