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RJK6015DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1536-0200 Rev.2.00 Apr 18, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 21 63 21 63 6 1.9 150 0.833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C
REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Page 1 of 6
RJK6015DPK
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.315 2600 240 28 40 45 107 40 67 13 29 0.89 430 Max — 1 ±0.1 4.5 0.360 — — — — — — — — — — 1.50 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10.5 A VGS = 10 V RL = 28.6 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 21 A IF = 21 A, VGS = 0 Note4 IF = 21 A, VGS = 0 diF/dt = 100 A/µs
REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Page 2 of 6
RJK6015DPK
Main Characteristics
Power vs. Temperature Derating
400 1000 100
1m
10 µs
Maximum Safe Operation Area
Pch (W)
300
ID (A)
10 1 0.1
DC Operation (Tc = 25°C)
s
10
0µ
s
Channel Dissipation
200
Drain Current
100
Operation in this area is limited by 0.01 RDS(on)
PW = 10 ms (1shot)
0
50
100
150
200
0.001 0.1
Ta = 25°C
1
10
100
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 6V 8 V, 10 V 100 5.6 V Pulse Test 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
16
5.4 V
20 10 5 2 1 0.5 0.2 0.1 0 2 4 Tc = 75°C 25°C −25°C 6 8 10
12
Drain Current
5.2 V 8 5V 4
VGS = 4.8 V
0
4
8
12
16
20
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source on State Resistance RDS(on) (Ω)
1 VGS = 10 V 0.5
S.