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SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
55 4.4 100
P- TO220 -3-1
V mΩ A
• Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
Type
Package
Ordering Code Q67060-S6043 Q67060-S6042
Marking PN06L05 PN06L05
SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 100 100
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPP100N06S2L-05 SPB100N06S2L-05
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID =250µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA mΩ 4.3 4 3.5 3.2 5.9 5.6 4.7 4.4
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=80A V GS=4.5V, I D=80A, SMD version
Drain-source on-state resistance
V GS=10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 175A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2003-05-09
SPP100N06S2L-05 SPB100N06S2L-05
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =44V, ID =100A, VGS =0 to 10V VDD =44V, ID =100A
Symbol
Conditions min.
Values typ. 176 5660 1330 360 18 25 98 24 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz
88 -
S
7530 pF 1760 540 27 38 150 36 ns
VDD =30V, VGS =4.5V, ID =100A, RG =1.3Ω
-
19 57 170 3.3
25 90 230 -
nC
V(plateau) VDD =44V, ID =100A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =80A VR =30V, IF =lS , diF /dt=100A/µs
IS
TC=25°C
-
0.9 65 125
100 400 1.3 80 160
A
V ns nC
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2003-05-09
SPP100N06S2L-05 SPB100N06S2L-05
1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V
320
SPP100N06S2L-05
2 Drain current ID = f (T C) parameter: VGS≥ 10 V
110
SPP100N06S2L-05
A W
90 240 80
P tot
200
ID
100 120 140 160 °C 190
70 60
160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10
3 SPP100N06S2L-05 t = 19.0µs p
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPP100N06S2L-05
K/W A
DS
10
V /I
D
0
=
ID
R
DS (on )
10
2
100 µs
Z thJC
10
-1
10
1 ms
-2
D = 0.50 0.20
-3
10
1
10
0.10 0.05 0.02
10
-4
single pulse
0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-05-09
SPP100N06S2L-05 SPB100N06S2L-05
5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
240
SPP100N06S2L-05
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
16
SPP100N06S2L-05
Ptot = 300W
i h g
V [V] GS a
A Ω
2.6 2.8 3.0 3.5 3.7 3.9 4.1 4.5 10.0
d
e
f
200 180 160
f b
c d e
R DS(on)
12
ID
140 120 100 80
e
10
f g h
8
g
d i
6
h
60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5
c b a
4
i
2 VGS [V] =
d 3.5 e 3.7 f 3.9 g 4.1 h i 4.5 10.0
4
V
0 5 0 20 40 60
80 100 120 140 160 180 A 210
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
200
8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs
220
A
160 14.