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SPB100N06S2L-05 Dataheets PDF



Part Number SPB100N06S2L-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB100N06S2L-05 DatasheetSPB100N06S2L-05 Datasheet (PDF)

www.DataSheet4U.com SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parame.

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www.DataSheet4U.com SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 4.3 4 3.5 3.2 5.9 5.6 4.7 4.4 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=80A V GS=4.5V, I D=80A, SMD version Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 175A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =100A, VGS =0 to 10V VDD =44V, ID =100A Symbol Conditions min. Values typ. 176 5660 1330 360 18 25 98 24 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 88 - S 7530 pF 1760 540 27 38 150 36 ns VDD =30V, VGS =4.5V, ID =100A, RG =1.3Ω - 19 57 170 3.3 25 90 230 - nC V(plateau) VDD =44V, ID =100A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =30V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 65 125 100 400 1.3 80 160 A V ns nC Page 3 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 4 V 320 SPP100N06S2L-05 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 110 SPP100N06S2L-05 A W 90 240 80 P tot 200 ID 100 120 140 160 °C 190 70 60 160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP100N06S2L-05 t = 19.0µs p 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP100N06S2L-05 K/W A DS 10 V /I D 0 = ID R DS (on ) 10 2 100 µs Z thJC 10 -1 10 1 ms -2 D = 0.50 0.20 -3 10 1 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 240 SPP100N06S2L-05 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 16 SPP100N06S2L-05 Ptot = 300W i h g V [V] GS a A Ω 2.6 2.8 3.0 3.5 3.7 3.9 4.1 4.5 10.0 d e f 200 180 160 f b c d e R DS(on) 12 ID 140 120 100 80 e 10 f g h 8 g d i 6 h 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 c b a 4 i 2 VGS [V] = d 3.5 e 3.7 f 3.9 g 4.1 h i 4.5 10.0 4 V 0 5 0 20 40 60 80 100 120 140 160 180 A 210 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 200 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 220 A 160 14.


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