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SPB100N08S2-07 Datasheet, Equivalent, OptiMOS Power-Transistor.

OptiMOS Power-Transistor

OptiMOS Power-Transistor

 

 

 

Part SPB100N08S2-07
Description OptiMOS Power-Transistor
Feature www.
DataSheet4U.
com SPP100N08S2-07 SPB1 00N08S2-07 OptiMOS® Power-Transistor F eature
• N-Channel Product Summary V DS RDS(on) max.
SMD version ID P- TO263 -3-2 75 6.
8 100 P- TO220 -3-1 V mΩ A
• Enhancement mode
• 175°C ope rating temperature
• Avalanche rated
• dv/dt rated Type SPP100N08S2-07 SP B100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 PN0807 Ma ximum Ratings, at Tj = 25 °C, unless o therwise specified Parameter Symbol Con tinuous drain current 1) TC=25°C Valu e 100 100 Unit A ID Pulsed drain cur rent TC=25°C ID puls EAS EAR .
Manufacture Infineon Technologies
Datasheet
Download SPB100N08S2-07 Datasheet
Part SPB100N08S2-07
Description OptiMOS Power-Transistor
Feature www.
DataSheet4U.
com SPP100N08S2-07 SPB1 00N08S2-07 OptiMOS® Power-Transistor F eature
• N-Channel Product Summary V DS RDS(on) max.
SMD version ID P- TO263 -3-2 75 6.
8 100 P- TO220 -3-1 V mΩ A
• Enhancement mode
• 175°C ope rating temperature
• Avalanche rated
• dv/dt rated Type SPP100N08S2-07 SP B100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 PN0807 Ma ximum Ratings, at Tj = 25 °C, unless o therwise specified Parameter Symbol Con tinuous drain current 1) TC=25°C Valu e 100 100 Unit A ID Pulsed drain cur rent TC=25°C ID puls EAS EAR .
Manufacture Infineon Technologies
Datasheet
Download SPB100N08S2-07 Datasheet

SPB100N08S2-07

SPB100N08S2-07
SPB100N08S2-07

SPB100N08S2-07

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