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SPB100N08S2-07 Datasheet, Equivalent, OptiMOS Power-Transistor.OptiMOS Power-Transistor OptiMOS Power-Transistor |
| Part | SPB100N08S2-07 |
|---|---|
| Description | OptiMOS Power-Transistor |
| Feature | www. DataSheet4U. com SPP100N08S2-07 SPB1 00N08S2-07 OptiMOS® Power-Transistor F eature • N-Channel Product Summary V DS RDS(on) max. SMD version ID P- TO263 -3-2 75 6. 8 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C ope rating temperature • Avalanche rated • dv/dt rated Type SPP100N08S2-07 SP B100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 PN0807 Ma ximum Ratings, at Tj = 25 °C, unless o therwise specified Parameter Symbol Con tinuous drain current 1) TC=25°C Valu e 100 100 Unit A ID Pulsed drain cur rent TC=25°C ID puls EAS EAR . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SPB100N08S2-07 |
|---|---|
| Description | OptiMOS Power-Transistor |
| Feature | www. DataSheet4U. com SPP100N08S2-07 SPB1 00N08S2-07 OptiMOS® Power-Transistor F eature • N-Channel Product Summary V DS RDS(on) max. SMD version ID P- TO263 -3-2 75 6. 8 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C ope rating temperature • Avalanche rated • dv/dt rated Type SPP100N08S2-07 SP B100N08S2-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6044 Q67060-S6046 Marking PN0807 PN0807 Ma ximum Ratings, at Tj = 25 °C, unless o therwise specified Parameter Symbol Con tinuous drain current 1) TC=25°C Valu e 100 100 Unit A ID Pulsed drain cur rent TC=25°C ID puls EAS EAR . |
| Manufacture | Infineon Technologies |
| Datasheet |
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