SPP1013
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect ...
SPP1013
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
FEATURES P-Channel
-20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89) package design
PIN CONFIGURATION( SOT-523 / SC-89 )
PART MARKING
2020/04/15 Ver.4
Page 1
SPP1013
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP1013S52RGB
SOT-523
※ SPP1013S52RGB : Tape Reel ; Pb – Free, Halogen – Free
Part Marking Y
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate –Source Voltage
VGSS
±12
V
TA=25℃
-0.45
Continuous D...