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SPP10N10 Datasheet, Equivalent, SIPMOS Power-Transistor.

SIPMOS Power-Transistor

SIPMOS Power-Transistor

 

 

 

Part SPP10N10
Description SIPMOS Power-Transistor
Feature www.
DataSheet4U.
com Preliminary data S PI10N10 SPP10N10,SPB10N10 SIPMOS Po wer-Transistor Feature  N-Channel  En hancement mode 175°C operating tempe rature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summar y VDS R DS(on) ID 100 170 10.
3 P-TO220- 3-1 V m A Type SPP10N10 SPB10N10 SPI 10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N 10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Par ameter Continuous drain current TC=25° C TC=100°C Symbol ID Value 10.
3 7.
8 Unit A Pulsed drai .
Manufacture Infineon Technologies
Datasheet
Download SPP10N10 Datasheet
Part SPP10N10
Description SIPMOS Power-Transistor
Feature www.
DataSheet4U.
com Preliminary data S PI10N10 SPP10N10,SPB10N10 SIPMOS Po wer-Transistor Feature  N-Channel  En hancement mode 175°C operating tempe rature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summar y VDS R DS(on) ID 100 170 10.
3 P-TO220- 3-1 V m A Type SPP10N10 SPB10N10 SPI 10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N 10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Par ameter Continuous drain current TC=25° C TC=100°C Symbol ID Value 10.
3 7.
8 Unit A Pulsed drai .
Manufacture Infineon Technologies
Datasheet
Download SPP10N10 Datasheet

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