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SPP10N10 Datasheet, Equivalent, SIPMOS Power-Transistor.SIPMOS Power-Transistor SIPMOS Power-Transistor |
| Part | SPP10N10 |
|---|---|
| Description | SIPMOS Power-Transistor |
| Feature | www. DataSheet4U. com Preliminary data S PI10N10 SPP10N10,SPB10N10 SIPMOS Po wer-Transistor Feature N-Channel En hancement mode 175°C operating tempe rature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summar y VDS R DS(on) ID 100 170 10. 3 P-TO220- 3-1 V m A Type SPP10N10 SPB10N10 SPI 10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N 10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Par ameter Continuous drain current TC=25° C TC=100°C Symbol ID Value 10. 3 7. 8 Unit A Pulsed drai . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SPP10N10 |
|---|---|
| Description | SIPMOS Power-Transistor |
| Feature | www. DataSheet4U. com Preliminary data S PI10N10 SPP10N10,SPB10N10 SIPMOS Po wer-Transistor Feature N-Channel En hancement mode 175°C operating tempe rature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summar y VDS R DS(on) ID 100 170 10. 3 P-TO220- 3-1 V m A Type SPP10N10 SPB10N10 SPI 10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N 10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Par ameter Continuous drain current TC=25° C TC=100°C Symbol ID Value 10. 3 7. 8 Unit A Pulsed drai . |
| Manufacture | Infineon Technologies |
| Datasheet |
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