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Preliminary data
SPI10N10 SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 170 10.3
P-TO220-3-1
V m A
Type SPP10N10 SPB10N10 SPI10N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120
Marking 10N10 10N10 10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.3 7.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =10.3 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 3 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = VDS
ID = 21 µA
Zero gate voltage drain current
VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj =125°C
µA 0.01 1 1 137 1 100 100 170 nA m
Gate-source leakage current
VGS =20V, VDS =0V
Drain-source on-state resistance
VGS =10V, ID =7.8A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf
VDD =50V, VGS =10V, ID =10.3A, RG=2.2 VDS 2*ID*RDS(on)max , ID =7.8A VGS =0V, VDS=25V, f=1MHz
Symbol
Conditions min. 2.6 -
Values typ. 5.8 320 72 43 8.2 46 29 23 max. 426 96 65 12 69 44 35
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =80V, ID =10.3A, VGS =0 to 10V VDD =80V, ID =10.3A
-
2.3 7.9 14.6 6.4
3 11.9 19.4 -
nC
V(plateau) VDD =80V, ID=10.3A
V
Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =0V, IF =10.3A VR =50V, IF =lS , diF /dt=100A/µs
IS ISM
TC=25°C
-
0.93 57 134
10.3 41.2 1.25 71 167
A
V ns nC
Page 3
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
1 Power dissipation
Ptot = f (TC )
55
SPP10N10
2 Drain current
ID = f (TC )
parameter: VGS 10 V
12
SPP10N10
W
45 40
A
10 9 8
Ptot
ID
7 6 5 4 3 2 1 20 40 60 80 100 120 140 160 °C 190 0 0 20 40 60 80 100 120 140 160 °C 190
35 30 25 20 15 10 5 0 0
TC
TC
3 Safe operating area
ID = f ( VDS )
4 Transient thermal impedance
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
10
2 SPP10N10 tp = 4.9µs
parameter : D = tp /T
10 1
SPP10N10
K/W
/I
D
A
DS
on )
=
V
10 µs
10 0
ID
R
10 1
Z thJC
100 µs
DS (
10 -1
D = 0.50 10 10
0 1 ms -2
0.20 0.10 single pulse 0.05 0.02 0.01
10 ms
DC
10 -3
10 -1 0 10
10
1
10
2
V
10
3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
5 Typ. output characteristic
ID = f (VDS ); Tj=25°C
6 Typ. drain-source on resistance
RDS(on) = f (ID )
parameter: tp = 80 µs
25
h g
parameter: VGS
400
VGS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10
m
A
a
b
c
d
e
f
VGS[V]= a= 5 b= 5.5 c= 6 d= 6.5 e= 7 f= 8 g= 9 h= 10
f
RDS(on)
300
ID
15
e
250
g
200
h
10
d
150
c
100
5
b
50
a
0 0
2
4
6
8
10
V
13
0 0
5
10
15
20
25
A
35
VDS
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs
12
8 Typ. forward transconductance
gfs = f(ID ); Tj=25°C
parameter: gfs
7
A
S
5
g fs
4 3 2 1 1 2 3 4 5 7 0 0
8
ID
6 4 2 0 0
V
1
2
3
4
5
6
7
8
A
10
VGS
Page 5
ID
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
9 Drain-source on-state resistance
RDS(on) = f (Tj )
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter : ID = 7.8 A, VGS = 10 V
SPP10N10
parameter: VGS = VDS
4
m
750
V
600
RDS(on)
ID =1mA
500 450 400 350 300 250 200 150 100 50 0 -60 -20 20 60 100 140
°C
VGS(th)
98% typ
550
3
2.5
2
ID =.