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SPI10N10L SPP10N10L
SIPMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID
PG-TO262-3-1
...
www.DataSheet4U.com
SPI10N10L SPP10N10L
SIPMOS Power-
Transistor
Feature
Product Summary VDS RDS(on) ID
PG-TO262-3-1
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 154 10.3
V m A
PG-TO220-3-1
Type SPP10N10L SPI10N10L
Package PG-TO220-3-1 PG-TO262-3-1
Ordering Code Q67042-S4163 Q67042-S4162
Marking 10N10L 10N10L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.3 8.1
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
42.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =10.3 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Rev. 2.1
Page 1
2005-02-14
SPI10N10L SPP10N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 3 100 75 50
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2
Values typ. 1.6 max. 2
Unit
V
Gate thre...
