SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultr...
SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
Periodic avalanche rated
PG-TO220-F3P-31 PG-TO262- PG-TO220
Extreme dv/dt rated
2
Ultra low effective capacitances Improved transconductance
1 23 P-TO220-3-31
P-TO220-3-1
23 1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type SPP12N50C3
Package PG-TO220
Ordering Code Q67040-S4579
Marking 12N50C3
SPI12N50C3 SPA12N50C3
PG-TO262 Q67040-S4578 PG-TO220FP SP000216322
12N50C3 12N50C3
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7)
Symbol
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
Value
SPP_I
SPA
11.6 7
34.8 340
11.61) 71) 34.8 340
0.6
0.6
11.6
11.6
±20
±20
±30
±30
125
33
-55...+150 15
Unit A
A mJ
A V W °C V/ns
Rev. 3.1
Page 1
2009-11-30
SPP12N50C3 SPI12N50C3, SPA12N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junct...