SPP15N60C3, SPI15N60C3 SPA15N60C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultr...
SPP15N60C3, SPI15N60C3 SPA15N60C3
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
Ultra low effective capacitances Improved transconductance
P-TO220-3-31
3 12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V 0.28 Ω 15 A
PG-TO220
Type SPP15N60C3 SPI15N60C3 SPA15N60C3
Package PG-TO220 PG-TO262 PG-TO220FP
Ordering Code Q67040-S4600 Q67040-S4601 SP000216325
Marking 15N60C3 15N60C3 15N60C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=7.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=15A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6)
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
Value
SPP_I
SPA
15 151) 9.4 9.41)
45 45 460 460
Unit A
A mJ
0.8 0.8
15 15 ±20 ±20 ±30 ±30 156 34
-55...+150
15
A V
W °C V/ns
Rev. 3.2
page 1
2009-12-22
SPP15N60C3, SPI15N60C3 SPA15N60C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 15 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junctio...