SIPMOS® Small-Signal-Transistor
Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead ...
SIPMOS® Small-Signal-
Transistor
Features P-Channel Enhancement mode Normal level Avalanche rated Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249_2_21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPP15P10P H
-100 V 0.24 Ω -15 A
PG-TO220-3
Type SPP15P10P H
Package PG-TO220-3
Marking 15P10P
Lead free Packing
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
ID
T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS
I D=-15 A, R GS=25 Ω
V GS
P tot
T C=25 °C
T j, T stg
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
-15
A
-10.6
-60
230
mJ
±20
V
128
W
-55 ... 175
°C
1C (1kV to 2kV)
260 °C
55/175/56
Rev 1.7
page 1
2011-09-01
Parameter
Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient
Symbol Conditions
SPP15P10P H
min.
Values typ.
Unit max.
R thJC
-
R thJA
minimal footprint, steady state
-
6 cm2 cooling area1),
-
steady state
-
1.17 K/W
-
75
-
45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Tr...