SPP18P06P

www.DataSheet4U.com Preliminary data SPP18P06P SPB18P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.13 -18.6 V W · · · · A Type SPP18P06P SPB18P06P Package Ordering Code Pin 1 G PIN 2/4 D PIN 3 S P-TO220-3-1 Q67040-S4182 P-TO263-3-2 Q67040-S4191 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -18.6 -13.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -74.4 150 8 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -18.6 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -18.6 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 80 -55...+175 55/175/56 V W °C T C = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - SPP18P06P SPB18P06P Unit max. 1.85 62 62 40 K/W RthJC RthJA RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Stat...