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GSS4565

GTM

POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B GSS4565 N AND P-CHANNEL ...


GTM

GSS4565

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B GSS4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS4565 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Performance Description N-CH BVDSS 40V N-CH RDS(ON) 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 40 20 7.6 6 30 2.0 0.016 -40 20 -6.5 -5.2 -30 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GSS4565 Page: 1/7 ISSUED DATE :2005/07/27 REVISED DATE :2005/09/29B N-Channel Electrical Characteristics(Tj = 2...




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