GSS4957

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B GSS4957 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 24m -7.7A The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual P MOSFET Package Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 20 -7.7 -6.1 -30 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 62.5 Unit /W GSS4957 Page: 1/4 ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -30 -1.0 Typ. -0.02 12 20 30 27 5 18 14 11 38 25 1670 530 435 3 Max. -3.0 100 -1 -25 24 36 45 2670 4.5 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, I...