POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B
GSS4957
P-CHANNEL ENHANC...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B
GSS4957
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 24m -7.7A
The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual P MOSFET Package
Description
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings -30 20 -7.7 -6.1 -30 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-amb
Value 62.5
Unit /W
GSS4957
Page: 1/4
ISSUED DATE :2005/08/01 REVISED DATE :2005/09/29B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -30 -1.0 Typ. -0.02 12 20 30 27 5 18 14 11 38 25 1670 530 435 3 Max. -3.0 100 -1 -25 24 36 45 2670 4.5 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, I...
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