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GSS6900S

GTM

POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : GSS6900S DUAL N-CHANNEL MOSFET WITH...


GTM

GSS6900S

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : GSS6900S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *DC-DC Converter Suitable *Fast Switching Performance Description CH1 BVDSS 30V N-CH RDS(ON) 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings CH-1 CH-2 Unit V V A A A W W/ 30 ±20 5.7 4.6 20 1.4 0.01 30 ±20 9.8 7.8 30 3.1 0.02 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient 3 3 3 Symbol Rthj-a(CH-1) Rthj-a(CH-2) Rthj-a(Schottky) Value Typ. 70 42 52 Max. 90 40 60 Unit...




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