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GSS6982 Datasheet, Equivalent, POWER MOSFET.POWER MOSFET POWER MOSFET |
| Part | GSS6982 |
|---|---|
| Description | POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/04/24 REVISED DA TE : GSS6982 DUAL N-CHANNEL ENHANCEMEN T MODE POWER MOSFET The GSS6982 provid e the designer with the best combinatio n of fast switching, ruggedized device design, ultra low on-resistance and cos t-effectiveness. Description CH1 BVDS S 30V N-CH RDS(ON) 18m N-CH ID 8. 5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7. 3 A Features *Low On-resistance *Fast S witching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5. 80 4. 80 3. 80 0° 0. 40 0. 19 6. 20 5. 00 4. 00 8° 0. 90 0. 25 REF. M H L J K G Millimeter Min. Max. 0. 10 . |
| Manufacture | GTM |
| Datasheet |
| Part | GSS6982 |
|---|---|
| Description | POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/04/24 REVISED DA TE : GSS6982 DUAL N-CHANNEL ENHANCEMEN T MODE POWER MOSFET The GSS6982 provid e the designer with the best combinatio n of fast switching, ruggedized device design, ultra low on-resistance and cos t-effectiveness. Description CH1 BVDS S 30V N-CH RDS(ON) 18m N-CH ID 8. 5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7. 3 A Features *Low On-resistance *Fast S witching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5. 80 4. 80 3. 80 0° 0. 40 0. 19 6. 20 5. 00 4. 00 8° 0. 90 0. 25 REF. M H L J K G Millimeter Min. Max. 0. 10 . |
| Manufacture | GTM |
| Datasheet |
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