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GSS6982 Dataheets PDF



Part Number GSS6982
Manufacturers GTM
Logo GTM
Description POWER MOSFET
Datasheet GSS6982 DatasheetGSS6982 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : GSS6982 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Description CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A Features *Low On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : GSS6982 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Description CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A Features *Low On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings CH-1 CH-2 Unit V V A A A W W/ 30 ±25 8.5 6.8 30 2.0 0.016 30 ±25 7.3 5.8 30 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GSS6982 Page: 1/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-1 Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 1.0 Typ. 0.03 12 15 23 14 4 8 12 7 25 9 1050 240 165 1.6 Max. 3.0 ±100 1 25 18 30 22 1680 2.4 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=8A VGS= ±25V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=8A VGS=4.5V, ID=6A ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. - Typ. 23 15 Max. 1.2 - Unit V ns nC Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad. GSS6982 Page: 2/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-2 Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 30 1.0 Typ. 0.03 10 22 36 9 3 5 9 6 19 6 640 150 105 1.7 Max. 3.0 ±100 1 25 26 45 15 1030 2.5 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=7A VGS= ±25V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. - Typ. 18 8 Max. 1.2 - Unit V ns nC Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad. GSS6982 Page: 3/7 ISSUED DATE :2006/04/24 REVISED DATE : Characteristics Curve CH-1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GSS6982 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics GSS6982 Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-2 Fig 1. Typical Output Characteristics Fig 2. Ty.


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