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Pb Free Plating Product
ISSUED DATE :2006/04/24 REVISED DATE :
GSS6982
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Description
CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A
Features
*Low On-resistance *Fast Switching
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings
CH-1 CH-2
Unit V V A A A W W/
30 ±25 8.5 6.8 30 2.0 0.016
30 ±25 7.3 5.8 30
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 62.5
Unit /W
GSS6982
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ISSUED DATE :2006/04/24 REVISED DATE :
CH-1 Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 30 1.0 Typ. 0.03 12 15 23 14 4 8 12 7 25 9 1050 240 165 1.6 Max. 3.0 ±100 1 25 18 30 22 1680 2.4 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=8A VGS= ±25V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=8A VGS=4.5V, ID=6A ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Parameter Forward On Voltage2 Reverse Recovery Time
2
Symbol VSD Trr Qrr
Min. -
Typ. 23 15
Max. 1.2 -
Unit V ns nC
Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V dI/dt=100A/ s
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad.
GSS6982
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ISSUED DATE :2006/04/24 REVISED DATE :
CH-2 Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 30 1.0 Typ. 0.03 10 22 36 9 3 5 9 6 19 6 640 150 105 1.7 Max. 3.0 ±100 1 25 26 45 15 1030 2.5 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=7A VGS= ±25V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A VGS=10 RG=3.3 RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Parameter Forward On Voltage2 Reverse Recovery Time
2
Symbol VSD Trr Qrr
Min. -
Typ. 18 8
Max. 1.2 -
Unit V ns nC
Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/ s
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad.
GSS6982
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ISSUED DATE :2006/04/24 REVISED DATE :
Characteristics Curve CH-1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GSS6982
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2006/04/24 REVISED DATE :
CH-1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GSS6982
Fig 12. Gate Charge Waveform
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ISSUED DATE :2006/04/24 REVISED DATE :
CH-2
Fig 1. Typical Output Characteristics
Fig 2. Ty.